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| SMD Type PNP Transistors KMBT5401(MMBT5401) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Pb-Free Packages are Available 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High Voltage Transistors 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector Power Dissipation Junction and storage temperature Symbol VCBO VCEO VEBO IC Pc TJ, Tstg Rating -160 -150 -5 -0.6 300 -55 to +150 Unit V V V A mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol VCBO VCEO VEBO ICBO IEBO IC = -100 Testconditons A, IE = 0 Min -160 -150 -5 -0.1 -0.1 80 100 50 -0.5 -1.0 100 V V MHz 300 Typ Max Unit V V V A A IC =- 1.0 mA, IB = 0 IE = -10 A, IC = 0 VCB =- 120 V, IE = 0 VEB = -4.0 V, IC = 0 IC = -1.0 mA, VCE = -5 V DC current gain * hFE IC = -10 mA, VCE = -5 V IC = -50 mA, VCE = -5 V Collector-emitter saturation voltage * Base-emitter saturation voltage * Transiston frequency * Pulse Test: Pulse Width = 300 VCE(sat) IC = -50 mA, IB = -5.0 mA VBE(sat) IC = -50 mA, IB = -5.0 mA fT VCE=-5V,IC=-10mA,f=30MHz s, Duty Cycle=2.0%. Marking Marking 2L +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type KMBT5401(MMBT5401) Typical Characteristics Transistors Fig.1 Max Power Dissipation vs. Ambient Temperature Fig.2 Collector Emitter Saturation Voltage vs.Collector Current Fig.3 DC Current Gain vs. Collector Current Fig.4 Base Emitter Voltage vs.Collector Current Fig.5 Gain Bandwidth Product vs. Collector Current 2 www.kexin.com.cn |
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